Transistors

product details Complementary to TIP42 / TIP42A / TIP42B / TIP42C TIP41C Absolute Maximum Ratings Collector-Base Voltage : Vcbo = 100V Collector-Emitter Voltage : Vceo = 100V Emitter-Base Voltage : Vebo = 5V Collector Current (DC) : Ic = 6A Features Medium Power Linear Switching Applications Complement to TIP42 Series

product details TIP42C is a PNP general purpose transistor available in TO-220 package. This transistor is manufactured in four different types and their part numbers are TIP42, TIP42A, and TIP42B & TIP42C. The main differences between these parts are their voltage. TIP42C features highest load voltage from all. It can be used for any general purpose switching requirements. It can drive maximum load of -6A or -6000mA and maximum load voltage can be -100V. Additionally it can also be used for any general amplification purposes. The maximum collector dissipation of the transistor is 65 watt due to which it can be used for high power audio amplification and also in audio amplifier stages. Features / Technical Specifications: Transistor Type: PNP Max Collector Current(IC): –6A Max Collector-Emitter Voltage (VCE): –100V Max Collector-Base Voltage (VCB): –100V Max Emitter-Base Voltage (VEBO): –5V Max Collector Dissipation (Pc): 65 Watt Max Transition Frequency (fT): 3 MHz Minimum & Maximum DC Current Gain (hFE): 15 – 75 Max Storage & Operating temperature Should Be: -65 to +150 Centigrade Applications: Audio Amplifiers Motor Driver Circuits Battery Charger Designs Power Supply Designs Switching Loads under -6A

product details The TIP122 is a Darlington pair NPN transistor. It functions like a normal NPN transistor, but since it has a Darlington pair inside it has a good collector current rating of about 5A and a gain of about 1000. It can also withstand about 100V across its collector- Emitter hence can be used to drive heavy loads. The Darlington pair inside this transistor is shown clearly as its internal circuit schematic (second picture). As you can see, there are two transistors inside this TO-220 package in which the emitter of the first transistor is connected with the base of the second transistor and the collector of both transistors are connected together to form a Darlington pair. This increases the current gain and current rating of this transistor. TIP122n used for Medium Power Linear Switching Applications and Complements to TIP125/126/127. Features of TIP 122 Darlington Medium-power NPN Transistor High DC Current Gain (hFE), typically 1000 Continuous Collector current (IC) is 5A Collector-Emitter voltage (VCE) is 100 V Collector-Base voltage (VCB) is 100V Emitter Base Voltage (VBE) is 5V Base Current(IB) is 120mA Available in To-220 Package Applications of TIP 122 Can be used to switch high current (upto 5A) loads Can be used as medium Power switches Used where high amplification is needed Speed control of Motors Inverter and other rectifier circuits

product details TIP 127 is a simple PNP transistor, its collector current is about 5A and gain about 1000. This PNP transistor is used in low-speed switching and amplification circuit. Its complementary transistor is TIP122

product details The IRF9540NPBF from International Rectifier is -100V single P channel HEXFET power MOSFET in TO-220AB. This MOSFET features are extremelyon low resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result of power. MOSFET are well known to provide extremely efficiency and reliabilities which can be used in wide variety of applications. Specifications P Channel MOSFET. Drain Source Voltage Vds: 100V. Continuous Drain Current Id: 23A. On Resistance Rds(on): 0.117ohm. Transistor Case Style: TO-220AB. Transistor Mounting: Through Hole. Rds(on) Test Voltage Vgs: 10V. Threshold Voltage Vgs: 4V. Power Dissipation Pd: 140W. No. of Pins: 3Pins.

product details IRF540 is a power MOSFET designed to drive high current loads. It can handle maximum load of upto 23A and the maximum load voltage is upto 100V DC. It is using trench technology which makes it capable to reach high level of driving capability. It can be used for both switching and amplification purposes. This transistor possesses some of the good features that make it ideal to use as a switch. It is capable to perform high speed switching therefore it can be used in wide variety of application where you want to switch the load with high speed such as UPS. Other than that it can also be used as an amplifier, the maximum power dissipation of 100W makes it ideal to build a high power audio amplifier and it can also be used in high power audio amplifier stages. Features / Technical Specifications: Package Type: TO-220 Transistor Type: N Channel Max Voltage Applied From Drain to Source: 100V Max Gate to Source Voltage Should Be: ±20V Max Continues Drain Current is : 23A (Different manufacturers have slightly different ratings of continuous drain current) Max Pulsed Drain Current is: 92A (Different manufacturers have slightly different ratings of continuous drain current) Max Power Dissipation is: 100W Minimum Voltage Required to Conduct: 2V to 4V Max Storage & Operating temperature Should Be: -55 to +150 Celsius

product details TDA2030 is a powerful audio amplifier IC used as low frequency AB Amplifier. The device features with inbuilt short circuit protection, power dissipation limit and thermal protection. High output power, up to 20W . Application: - Audio amplifier, Cascade audio speaker, Portable speakers Very low external component required. High current output and high operating voltage. - Low harmonic and crossover distortion. - Built-in Over temperature protection. - Short circuit protection between all pins. - Safety Operating Area for output transistors.

product details Where to use 2N7000:2N7000 is a small signal N-channel MOSFET. MOSFET’s are power electronic switches just like transistors, but with a higher current and voltage rating. The 2N7000 MOSFET can be used to switch loads which operates on less than 60V (VDS) and 200mA (ID). This mosfet has a threshold voltage of 3V, hence if you looking for a small mosfet to switch a load then this IC could suit your purpose. Features: - Small signal N-Channel MOSFET - Drain-Source Voltage (VDS) is 60V - Continuous Drain Current (ID) is 200mA - Pulsed Drain Current (ID-peak) is 500mA - Gate threshold voltage (VGS-th) is 3V - Gate-Source Voltage is (VGS) is ±20V

product details 2N5551 is a general purpose NPN transistor built to use in high voltage circuits. The max collector to emitter voltage is 160V and collector to base voltage is 180V due to which it can be easily used in circuit using under 160 volts. The max output load this transistor can handle is 600mA and the max collector dissipation is 625mW. The transistor is built to use in general purpose applications therefore it can be used for amplification and switching. Features / technical specifications: - Transistor Type: NPN - Max Collector Current(IC): 6A or 600mA - Max Collector-Emitter Voltage (VCE): 160V - Max Collector-Base Voltage (VCB): 180V - Max Emitter-Base Voltage (VBE): 6V - Max Collector Dissipation (Pc): 625 mW - Max Transition Frequency (fT): 100 MHz - Minimum & Maximum DC Current Gain (hFE): 80 – 250 - Max Storage & Operating temperature Should be: -55 to +150 Centigrade

product details 2n5401 is a high voltage PNP general purpose transistor that can be used in verity of general purpose electronic applications that are operating from 150V or any voltage below 150V. These type of transistors are quite useful where the load connecting through the transistor is consuming less current but on the other hand it is working on high voltage, for example AC circuit which are not using any transformer to step down the voltage before the AC to DC converter diode bridge. These types of transistors are also used mostly in telephone circuits and in any electronic circuit where you want to make simple switching application or amplification on high voltage. The other technical specifications are also very fair to use it as a general purpose transistor like collector current is 600mA which is quite enough to control relays, LEDs, and other transistors in a circuit Features / technical specifications: - Transistor Type: PNP - Max Collector Current(IC): 600mA - Max Collector-Emitter Voltage (VCE): 150V - Max Collector-Base Voltage (VCB): 160V - Max Emitter-Base Voltage (VEBO): 5V - Max Collector Dissipation (Pc): 600 miliWatt - Max Transition Frequency (fT): 100 – 300 MHz - Minimum & Maximum DC Current Gain (hFE): 50 – 240 - Max Storage & Operating temperature Should Be: -65 to +150 Centigrade

product details The IRF540NPBF is 100V single N channel HEXFET power MOSFET in 3 pin TO-220AB package. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit combined with fast switching speed and ruggedized device design that HEXFET power MOSFETs which are well known for designers with extremely efficient and reliable devices to use in a wide variety of applications. Specifications: Technology: Si Mounting Style: Through Hole Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 33 A Rds On - Drain-Source Resistance: 44 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 2 V Qg - Gate Charge: 47.3 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 140 W Channel Mode: Enhancement Packaging: Tube

product details The BC337 is an NPN Transistor commonly used in low power amplifier circuits. The Transistor can provide a maximum gain (hfe) of 630. The BC337 has three part names, the gain value of BC337-16 is 100 to 250, for BC337-25 it is 160 to 400 and for BC337-40 it is 250 to 630. Apart from the gain value other parameters are similar for all the three part numbers. The transistor also has a high collector current of upto 800mA and a decent collector emitter voltage of 45V and the base trigger voltage is only 5V. This makes the transistor suitable to be used in general purpose switching circuits. Due to its low base trigger voltage it can be easily controlled by digital circuits like microcontroller circuits. So, if you are looking for a transistor for audio amplification then you might consider the BC337. Also look into the more commonly used 2N2222 Transistor if you are looking for a replacement for BC337 to switch loads. Applications - Low power audio amplifiers - Small signal amplifiers - Audio frequency Driver - Amplifier Output Stage - General purpose switching

product details BC327 is a general purpose PNP BJP transistor that can be used for switching and amplification purposes in electronic circuits. The transistor features 800mA collector current hence it can be used to drive variety of loads in an electronic application. The max collector-emitter voltage is -45V therefore it can easily handle load voltage under 45V. Apart from that transistor also features 625mW collector dissipation and DC current gain of maximum 630 therefore it can also be used as an audio amplifier or for any type of signal amplification. BC327 manufactured in different hFE classification that can be differentiate with the code number written after the transistor number. If you find code -16 after the transistor number then the hFE will be 100~250, if the code is -25 then the hFE will be 160~400 and if the code is -40 then the hFE will be 250~630.

product details C1815 is a widely used transistor, it is used in commercial and educational projects. It is designed for audio frequency amplification and high frequency OSC. Specification - Package Type: TO-92 - Transistor Type: NPN - Max Collector Current(IC): 150mA - Max Collector-Emitter Voltage (VCE): 50V - Max Collector-Base Voltage (VCB): 60V - Max Emitter-Base Voltage (VEBO): 5V - Max Collector Dissipation (Pc): 400 miliWatt - Max Transition Frequency (fT): 80 MHz - Minimum & Maximum DC Current Gain (hFE): 70 – 700 - Max Storage & Operating temperature Should Be: -55 to +150 Centigrade

product details Features and specifications: - Type: Bi-Polar NPN epitaxial silicon Transistor - DC Current Gain (hFE):110-400 - Collector current (IC): 700mA - Collector Base Voltage (VCB): 0 V - Collector-Emitter Voltage (VCE): 20V - Emitter Base Voltage (VEB): 5V - Maximum Power dissipation: 1W - Junction temperature: 150⁰C - Current gain-bandwidth product: 100MHz - Available in TO-92 Package Applications and uses: - Class B Amplifiers - Push-pull circuits - Switch for small loads - Amplifying low gain signals to high gain

products details Like S8050, its PNP alternative S8550 is also a widely used transistor, it is a reliable low cost transistor with very good technical characteristics. It is designed for audio amplification and other general requirements in electronic circuits but apart from that it is also used widely in commercial appliances. The S8550 possess some very good features in its small TO-92 package therefore it can be used in many electronics applications for example the output dissipation is 1 watt which is very good feature to use it for amplification of audio signal to around 1 watt and also in many other audio amplification stages. The max collector current is -700mA hence it can also be used for variety of switching application in electronic circuits. The max gain of the transistor is 400 which is also a plus point of this transistor.

product details 2N3904 is a widely used general purpose transistor. It is mostly used by electronic students and hobbyists in their projects, but it is also used in commercial electronic products. It can be used in wide variety of electronic applications for switching and amplification purposes. The maximum collector current of the transistor is 200mA therefore user can drive loads under 200mA in their electronic applications, Moreover 2N3904 also work good as an amplifier, the total device dissipation is 625 milliwatt due to which it can also be used for audio and RF signal amplification purposes. Features / technical specifications: Package Type: TO-92 Transistor Type: NPN Max Collector Current(IC): 200mA Max Collector-Emitter Voltage (VCE): 40V Max Collector-Base Voltage (VCB): 60V Max Emitter-Base Voltage (VEBO): 6V Max Collector Dissipation (Pc): 625 miliWatt Max Transition Frequency (fT): 300 MHz Minimum & Maximum DC Current Gain (hFE): 40 – 300 Max Storage & Operating temperature Should Be: -55 to +150 Centigrade

product details 2N3906 is a widely used transistor. This is also a famous transistor among hobbyists and students because it has been used in wide variety of electronic hobby and educational projects. The transistor is manufactured to perform general purpose tasks in electronic circuits hence it can be used for any general purpose requirement in electronic circuits that fall in its max specification values. The max collector current of the transistor is 200mA therefore it can be used to drive any load which falls under 200mA or 0.2A. Moreover the max collector dissipation value, DC current gain value also makes it ideal to use in wide variety of simple audio frequency applications.

product details The 2N2222 is a common NPN bipolar junction transistor (BJT) used for general purpose low-power amplifying or switching applications. It is designed for low to medium current, low power, medium voltage, and can operate at moderately high speeds. Specifications: Model: 2N2222 Transistor Type: NPN Current Rating: 0.8A Voltage Rating: 40V

product details BC547 is a general purpose BJT NPN transistor mostly used in electronics hobbyists and educational electronics projects. Besides these uses it can also be used in commercial circuits. It comes in TO-92 packaging and the maximum output current this transistor can handle is 100mA. The transistor is having very good DC current gain and low noise capabilities due to which it is ideal to use in signal amplification stages. The typical saturation voltage is only 90 millivolts which is also a good sign to use it as a switch. Features / technical specifications: - Package Type: TO-92 - Transistor Type: NPN - Max Collector Current(IC): 100mA - Max Collector-Emitter Voltage (VCE): 45V - Max Collector-Base Voltage (VCB): 50V - Max Emitter-Base Voltage (VEBO): 6V - Max Collector Dissipation (Pc): 500 miliWatt - Max Transition Frequency (fT): 300 MHz - Minimum & Maximum DC Current Gain (hFE): 110 – 800 - Max Storage & Operating temperature Should Be: -65 to +150 Centigrade

product details Characteristics of BC556 Transistor Type - PNP Collector-Emitter Voltage: -65 V Collector-Base Voltage: -80 V Emitter-Base Voltage: -5 V Collector Current: -0.1 A Collector Dissipation - 0.5 W DC Current Gain (hfe) - 110 to 800 Transition Frequency - 150 MHz Noise Figure - 2 dB Operating and Storage Junction Temperature Range -65 to +150 °C Package - TO-92

Description The 2SC5200 is a high-power NPN Transistor with a collector-to-emitter voltage of 230V and collector current of 30A. • High breakdown voltage: VCEO= 230 V (min) • Complementary to 2SA1943 • Suitable for use in 100-W high fidelity audio amplifier’s output stage Applications 1. POWER AMPLIFIER 2. Audio frequency Amplifier 3. AF /RF circuits 4. Low Slew rate devices 5. Push-Pull configuration circuits 6. high current switching (up to 15A) loads 7. Can be used as medium Power switches

Features Medium-power PNP Transistor DC Current Gain (hFE) 55 to 160 Continuous Collector current (IC) is 15A Collector-Emitter voltage (VCE) is 230 V Collector-Base voltage (VCB) is 230V Emitter Base Voltage (VBE) is 5V

product details Characteristics of 2SB649 Transistor Type - PNP Collector-Emitter Voltage: -120 V Collector-Base Voltage: -180 V Emitter-Base Voltage: -5 V Collector Current: -1.5 A Collector Dissipation - 20 W DC Current Gain (hfe) - 60 to 320 Transition Frequency - 140 MHz Operating and Storage Junction Temperature Range -55 to +150 °C

product details Features Collector-Emitter Volt (Vceo): 120V Collector-Base Volt (Vcbo): 180V Collector Current (Ic): 1.5A hfe: 60-320 @ 150mA Power Dissipation (Ptot): 20W Transition Frequency (ft): 140MHz Type: NPN

product details BC547 is a general-purpose BJT NPN transistor mostly used in electronics hobbyists and educational electronics projects. Besides these uses, it can also be used in commercial circuits. It comes in TO-92 packaging and the maximum output current this transistor can handle is 100mA. The transistor is having very good DC current gain and low noise capabilities due to which is ideal to use in signal amplification stages. The typical saturation voltage is only 90 millivolts which is also a good sign to use it as a switch Features / technical specifications: Package Type: TO-92 Transistor Type: NPN Max Collector Current(IC): 100mA Max Collector-Emitter Voltage (VCE): 45V Max Collector-Base Voltage (VCB): 50V Max Emitter-Base Voltage (VEBO): 6V Max Collector Dissipation (Pc): 500 miliWatt Max Transition Frequency (fT): 300 MHz Minimum & Maximum DC Current Gain (hFE): 110 – 800 Max Storage & Operating temperature Should Be: -65 to +150 Centigrade Applications: Sensor Circuits Audio Preamp circuits Audio Amplifier Stages Switching Loads under 100mA Transistor Darlington Pairs Radio Frequency Circuits

product details Features Bi-Polar PNP Transistor DC Current Gain (hFE) is 300 maximum Continuous Collector current (IC) is 100mA Emitter Base Voltage (VBE) is 6V Base Current(IB) is 5mA maximum Available in To-92 Package Applications Driver Modules like Relay Driver, LED driver, etc. Amplifier modules like Audio amplifiers, signal Amplifiers,s, etc. Darlington pair

product details NPN silicon power transistors use UTC’s advanced technology to provide customers with high collector-base voltage, etc. C2073 transistor is designed for use in general purpose Power amplifier, vertical output application. Features 1. Collector-Emitter Voltage Vceo = 150V (Min) 2. DC Current Gain : hFE = 40-140 @Ic = 500mA 3. Complementary PNP 2SA940 C2073 Pinout : 1. Base 2. Collector 3. Emitter 4. Collector ( Case ) Absolute maximum ratings ( Ta=25°C ) 1. Collector to Base Voltage : Vcbo = 150 V 2. Collector to Emitter Voltage : Vceo = 150 V 3. Emitter to Base Voltage : Vebo = 5.0 V 4. Collector Current : Ic = 1.5 A 5. Total Dissipation : Pc = 25 W 6. Junction Temperature : Tj = 150°C 7. Storage Temperatue : Tsg = -55 ~ +150°C

product details Characteristics of A940 Transistor Type - PNP Collector-Emitter Voltage: -150 V Collector-Base Voltage: -150 V Emitter-Base Voltage: -5 V Collector Current: -1.5 A Collector Dissipation - 25 W DC Current Gain (hfe) - 40 to 140 Transition Frequency - 4 MHz Operating and Storage Junction Temperature Range -55 to +150 °C Package - TO-220

product details Type Designator: 2SA1837 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 20 W Maximum Collector-Base Voltage |Vcb|: 230 V Maximum Collector-Emitter Voltage |Vce|: 230 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 1 A Max. Operating Junction Temperature (Tj): 150 °C Transition Frequency (ft): 70 MHz Collector Capacitance (Cc): 30 pF Forward Current Transfer Ratio (hFE), MIN: 100 Noise Figure, dB: - Package: TO220

product details 1. High transition frequency: fT= 200 MHz (typ.) 2. Complementary to 2SA1930 Absolute Maximum Ratings Collector-base voltage : VCBO = 180 V Collector-emitter voltage : VCEO = 180 V Emitter-base voltage : VEBO = 5 V Collector current : IC = 2 A Base current : IB = 1 A Power Amplifier Applications Driver Stage Amplifier Applications

product details Type Designator: A970 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0.3 W Maximum Collector-Base Voltage |Vcb|: 120 V Maximum Collector-Emitter Voltage |Vce|: 120 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 0.1 A Max. Operating Junction Temperature (Tj): 125 °C Transition Frequency (ft): 100 MHz Collector Capacitance (Cc): 4 pF Forward Current Transfer Ratio (hFE), MIN: 200

product details Characteristics of 2SB817 Transistor Type - PNP Collector-Emitter Voltage: -140 V Collector-Base Voltage: -160 V Emitter-Base Voltage: -6 V Collector Current: -12 A Collector Dissipation - 100 W DC Current Gain (hfe) - 60 to 200 Transition Frequency - 15 MHz Operating and Storage Junction Temperature Range -40 to +150 °C Package - TO-3P

Product details Type - NPN Collector-Emitter Voltage: 600 V Collector-Base Voltage: 1500 V Emitter-Base Voltage: 6 V Collector Current: 1.5 A Collector Dissipation - 50 W DC Current Gain (hfe) - 10 to 30 Operating and Storage Junction Temperature Range -55 to +150 °C Package - TO-3

product details Color TV Vertical Deflection Output Applications Power Switching Applications Features 1. High voltage: VCEO= −160 V 2. Large continuous collector current capability 3. Recommended for vertical deflection output & sound output applications for line-operated TV. 4. Complementary to 2SC2383. Maximum Ratings (Ta = 25°C) 1. Collector-base voltage : VCBO = −160 V 2. Collector-emitter voltage : VCEO = −160 V 3. Emitter-base voltage : VEBO = −6 V 4. Collector current : IC = −1 A 5. Base current : IB = −0.5 A 6. Collector power dissipation : PC = 900 mW 7. Junction temperature : Tj = 150 °C Applications : COLOR TV VERT. DEFELCTION OUTPUT

product details NPN type Transistors with 3 pins for inserting into the device. This B772has high dielectric strength, fast switching speed, large power dissipation, good current performance. For general purpose use, a great choice for your electronic devices. Specifications: PCM(Collector Power Dissipation): 1.25W Ic(Collector Current Continuous): 3A Vceo(Collector Emitter Voltage): 30V

product details Features Power output at 1kHz Load 8 ohm 50W Load 4 ohm 88W Power bandwidth +/- 1dB 20-50,000Hz Frequency response +/- 1dB 20-50,000Hz THD 20Hz-20kHz UP to rate power 0.05% Slew rate 20V/ microSec. Damping factor better than 50 Signal to noise ratio 88dB. Input voltage for maximum 100mV.

product details Specifications Attribute Value Transistor Type PNP Maximum DC Collector Current 8 A Maximum Collector-Emitter Voltage 250 V Package Type TO-220AB Mounting Type Through Hole Maximum Power Dissipation 50 W Transistor Configuration Single Maximum Collector Base Voltage 250 V Maximum Emitter Base Voltage 5 V Maximum Operating Frequency 30 MHz Pin Count 3 Number of Elements per Chip 1 Dimensions 9.28 x 10.28 x 4.82mm

product details Product Attribute Attribute Value Search Alternate Mfr Part Number 463634 Collector Current 16 A Collector to Base Voltage 250 V Collector to Emitter Voltage 250 V Configuration Common Base Dimensions 10.28 x 4.82 x 15.75 mm Emitter to Base Voltage 5 V Height 0.62" (15.75mm) Length 0.404" (10.28mm) Material Si Maximum Operating Temperature +150 °C Minimum Operating Temperature -65 °C Mounting Type Through Hole Number of Elements per Chip 1 Number of Pins 3 Operating Frequency 30 MHz Package Type TO-220 Polarity NPN Power Dissipation 50 W Primary Type Si Product Header Complementary Silicon Plastic Power Transistor Resistance, Thermal, Junction to Case 2.5 °C/W Series Transistor Series Temperature Operating Range -65 to +150 °C Transistor Type NPN Type Power Voltage, Breakdown, Collector to Emitter 250 V Voltage, Collector to Emitter, Saturation 0.5 V Width 0.19" (4.82mm)

Product Details MJE350 is a PNP high voltage transistor designed for applications where high voltage switching is required. The transistor is capable to handle a maximum load voltage of 300V which makes it ideal to use in many high voltage DC applications. The maximum load this transistor can handle is 500mA or 0.5A DC. MJE350 can not only use in high voltage circuits for switching but it can also be used in low voltage or battery-operated circuits as a switch. With the max collector dissipation of 20W, this transistor can also perform well in audio amplifier-related applications. In most audio amplifier applications it can be used with its NPN complementary MJE340 to get good audio output watts. Features / Technical Specifications: Package Type: TO-126 Transistor Type: NPN Max Collector Current(IC): –5A Max Collector-Emitter Voltage (VCE): –300V Max Collector-Base Voltage (VCB): –300V Max Emitter-Base Voltage (VEBO): –5V Max Collector Dissipation (Pc): 20 Watt Max Transition Frequency (fT): 4 MHz Minimum & Maximum DC Current Gain (hFE): 30– 240 Max Storage & Operating temperature Should Be: -65 to +150 Centigrade Applications: Inverter & UPS Applications Switching Power Supply Applications Linear Power Supply Applications Battery Charger Circuits Audio Amplification DC High Voltage Switching Motor Controller Applications

Product Details MJE340 is a TO-126 package NPN silicon BJT transistor designed for high voltage applications. The Maximum collector-emitter and collector-base voltage of the transistor are up to 300V which makes it ideal to use in a wide variety of high voltage applications. The device can be used with any general high voltage switching application for the max load of 0.5A or 500mA DC. Additionally, it can also be used for switching in low-power and battery-operated applications. MJE340 is not only limited to use for the above-mentioned purposes however it can also be used for amplification purposes, also the 20W collector dissipation makes it ideal to use in many general-purpose audio amplification purposes. Features / Technical Specifications: Package Type: TO-126 Transistor Type: NPN Max Collector Current(IC): 5A Max Collector-Emitter Voltage (VCE): 300V Max Collector-Base Voltage (VCB): 300V Max Emitter-Base Voltage (VEBO): 3V Max Collector Dissipation (Pc): 20 Watt Max Transition Frequency (fT): 4 MHz Minimum & Maximum DC Current Gain (hFE): 30– 240 Max Storage & Operating temperature Should Be: -65 to +150 Centigrade Applications: Linear Power Supplies Switching Power Supplies Inverter Circuits UPS Circuits Battery Charger Applications Motor Controllers Audio Amplification DC High Voltage Switching

Product Details BTA12-600,Triac BTA16-600 in the Triac category has 600V Breakdown Voltage. BTA16-600 Triac has a 16A continuous output current. To see the functions and functions of BTA16-600 Triac in more detail, please check the datasheet file. BTA16-600 TO-220 Triac Properties Name of the product BTA16-600 Product Category Triac / Thyristor / Diac Product Sub-Category Triac Package Type TO-220 Diode Type Triac Breakdown Voltage Vbr 600V Continuous Output Current 16A

product details - Medium-power PNP Transistor - DC Current Gain (hFE) 55 to 160 - Continuous Collector current (IC) is 15A - Collector-Emitter voltage (VCE) is 230 V - Collector-Base voltage (VCB) is 230V - Emitter Base Voltage (VBE) is 5V

Product Details The 2SC5200 is a high-power NPN Transistor with a collector-to-emitter voltage of 230V and collector current of 30A. • High breakdown voltage: VCEO= 230 V (min) • Complementary to 2SA1943 • Suitable for use in 100-W high fidelity audio amplifier’s output stage Applications 1. POWER AMPLIFIER 2. Audio frequency Amplifier 3. AF /RF circuits 4. Low Slew rate devices 5. Push-Pull configuration circuits 6. high current switching (up to 15A) loads 7. Can be used as medium Power switches

Product Details Programmable Unijunction Transistor (UJT) 40V 300 mW Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, , IV, and IP by merely selecting two resistor values. Application includes thyristor−trigger, oscillator, pulse and timing circuits. These devices may also be used in special thyristor applications due to the availability of an anode gate. Supplied in an inexpensive TO−92 plastic package for high−volume requirements, this package is readily adaptable for use in automatic insertion equipment.

Product Details Programmable Unijunction Transistor, 1uA Peak Current, 18uA Valley Current, 150mA Forward Anode Current, 300mW Power, -50°C to +100°C, 80ns Rise Time, TO-92 Case, The Programmable Unijunction Transistor or PUT is Similar to the Thyristor in that it has Four PN Layers, It has an Anode and a Cathode Connected to the First and the Last Layer and a Gate Connected to One of the Inner Layers, Application Includes Thyristor trigger, Oscillator, Pulse and Timing Circuits.

Product Details 200 PCS M1 M4 M7 SS14 SS24 RS1M US1M SS34 SS36 SS26 RS2M SS110 SS220 SS210 SS310 SS510 SS16 ES1J ES1D ES1M Rectifier Diode KIT Commonly used 20kinds of 10pcs each Package Type: Surface Mount Type: Rectifier Diode Power - Max: 1 W