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Home>Spare Parts>Transistors>IRF540NPBF TO-220 100V 33A N-Channel MOSFET
IRF540NPBF TO-220 100V 33A N-Channel MOSFET

IRF540NPBF TO-220 100V 33A N-Channel MOSFET

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Transistors
Tags: Transistors
UGX10,000
Standard Parcel Details
Option: Default
Category
Transistors
Unit
pc
Minimum Order Quantity
1
Condition
New
Warranty
7 days

About this item

  • product details The IRF540NPBF is 100V single N channel HEXFET power MOSFET in 3 pin TO-220AB package
  • It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area
  • This benefit combined with fast switching speed and ruggedized device design that HEXFET power MOSFETs which are well known for designers with extremely efficient and reliable devices to use in a wide variety of applications
  • Specifications: Technology: Si Mounting Style: Through Hole Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 33 A Rds On - Drain-Source Resistance: 44 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 2 V Qg - Gate Charge: 47.3 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 140 W Channel Mode: Enhancement Packaging: Tube

Product Description

product details The IRF540NPBF is 100V single N channel HEXFET power MOSFET in 3 pin TO-220AB package. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit combined with fast switching speed and ruggedized device design that HEXFET power MOSFETs which are well known for designers with extremely efficient and reliable devices to use in a wide variety of applications. Specifications: Technology: Si Mounting Style: Through Hole Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 33 A Rds On - Drain-Source Resistance: 44 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 2 V Qg - Gate Charge: 47.3 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 140 W Channel Mode: Enhancement Packaging: Tube