product details The IRF540NPBF is 100V single N channel HEXFET power MOSFET in 3 pin TO-220AB package
It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area
This benefit combined with fast switching speed and ruggedized device design that HEXFET power MOSFETs which are well known for designers with extremely efficient and reliable devices to use in a wide variety of applications
Specifications: Technology: Si Mounting Style: Through Hole Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 33 A Rds On - Drain-Source Resistance: 44 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 2 V Qg - Gate Charge: 47.3 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 140 W Channel Mode: Enhancement Packaging: Tube
Product Description
product details
The IRF540NPBF is 100V single N channel HEXFET power MOSFET in 3 pin TO-220AB package. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit combined with fast switching speed and ruggedized device design that HEXFET power MOSFETs which are well known for designers with extremely efficient and reliable devices to use in a wide variety of applications.
Specifications:
Technology: Si
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 33 A
Rds On - Drain-Source Resistance: 44 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 47.3 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 140 W
Channel Mode: Enhancement
Packaging: Tube
